SEMICONDUCTOR DEVICE

A semiconductor power device comprising a drift region of a first conductivity type, a body region of a second conductivity type disposed over the drift region, wherein the second conductivity type is opposite to the first conductivity type, at least two gate trench regions in contact with the body region and the drift region, wherein two laterally adjacent gate trench regions are separated by a mesa region, a contact region of a first conductivity type located in the mesa region and disposed over the body region, wherein the contact region has a higher doping concentration compared to the doping concentration of the drift region, and wherein the contact region is in contact with the two adjacent gate trench regions so that, in use, a channel is formed along each gate trench region and within the body region;a source contact disposed over the contact region, and an auxiliary gate region formed within the mesa region.