MEMORY DEVICE INCLUDING VERTICAL CHANNEL TRANSISTOR AND ELECTRONIC DEVICE INCLUDING THE SAME

A memory device includes a read word line on a substrate, a first channel extending along a plane perpendicular to an upper surface of the substrate, a second channel facing the first channel in parallel, a first gate insulation layer adjacent to the first channel between the first channel and the s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHA, Youngkwan, JUNG, Moonil, LEE, Kwanghee, KIM, Sangwook, KIM, Euntae, YANG, Jeeeun
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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