ON-CHIP EMF ISOLATION OF AN INTEGRATED CIRCUIT COUPLED WITH PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH UNDER AN ON-CHIP FARADAY CAGE

ON-CHIP EMF ISOLATION OF AN INTEGRATED CIRCUIT COUPLED WITH PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH UNDER AN ON-CHIP FARADAY CAGE

An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circ...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LAROCHE, Jeffrey R, TRULLI, Susan C, DEJARLD, Matthew
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure; an EMF shield enclosing the substrate, the gallium nitride layer and the photoconductive semiconductor switch laterally disposed alongside the transistor on the gallium nitride layer integrated into the integrated circuit structure; and a signal line electronically coupled with the photoconductive semiconductor switch, the signal line penetrating the EMF shield.