THROUGH WAFER TRENCH ISOLATION

THROUGH WAFER TRENCH ISOLATION

A device includes a die with a metallization stack. The device includes a substrate with a first region, a second region and a third region that underly the metallization stack and a first isolation trench filled with a polymer dielectric that extends between the first region and the second region o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SUMMERFELT, Scott, Robert, JACOBS, Simon, Joshua, HERZER, Stefan, COOK, Benjamin, Stassen
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A device includes a die with a metallization stack. The device includes a substrate with a first region, a second region and a third region that underly the metallization stack and a first isolation trench filled with a polymer dielectric that extends between the first region and the second region of the substrate. The device also includes a second isolation trench filled with the polymer dielectric that extends between the second region and the third region. The polymer dielectric overlays a periphery of the substrate.