STRUCTURES FOR THREE-TERMINAL MEMORY CELLS

The disclosed subject matter relates generally to structures for use in memory devices. More particularly, the present disclosure relates to three terminal resistive random-access (ReRAM) memory structures having source, drain, and control electrodes. The present disclosure provides a memory structure including a source electrode having an upper surface, a drain electrode having an upper surface, a dielectric channel layer laterally between the first electrode and the second electrode, a hole generating layer on the dielectric channel layer, and a control electrode on the hole generating layer, the control electrode has an upper surface. The upper surface of the control electrode is substantially coplanar with the upper surface of the source electrode and the upper surface of the drain electrode.