AN ATOMIC LAYER DEPOSITION APPARATUS AND AN ARRANGEMENT

An atomic layer deposition apparatus arranged to process multiple substrates concurrently in a batch process, the atomic layer deposition apparatus having a vacuum chamber, and a reaction chamber arranged inside the vacuum chamber. The reaction chamber includes a support part for supporting a substr...

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Bibliographische Detailangaben
Hauptverfasser: MERILÄINEN, Pasi, SOININEN, Pekka, BOSUND, Markus, SUHONEN, Olli-Pekka, MALILA, Matti
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:An atomic layer deposition apparatus arranged to process multiple substrates concurrently in a batch process, the atomic layer deposition apparatus having a vacuum chamber, and a reaction chamber arranged inside the vacuum chamber. The reaction chamber includes a support part for supporting a substrate rack provided inside the reaction chamber, and a cover part for forming a housing surrounding the substrate rack provided at the support part. The atomic layer deposition apparatus further includes a conductive heater arranged to the reaction chamber; the conductive heater is arranged to provide thermal energy to substrates provided in the substrate rack inside the reaction chamber. The invention also relates to an arrangement having a substrate rack inside the reaction chamber.