A SWITCHED INDUCTIVE STORAGE ELEMENT TO ENHANCE GATE DRIVE AT TURN-OFF
A switched inductive storage element to enhance gate drive at turn-off is described herein. An inductive storage element (e.g., an inductor) may be switched between a supply node and a gate node of a gated device (e.g., a low-side device and/or a high-side device). While coupled to the supply node,...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A switched inductive storage element to enhance gate drive at turn-off is described herein. An inductive storage element (e.g., an inductor) may be switched between a supply node and a gate node of a gated device (e.g., a low-side device and/or a high-side device). While coupled to the supply node, the inductive storage element may be energized; and subsequently, while coupled to the gate node of the gated device, the inductive storage element may drive the gate node (i.e., the gate of the low-side and/or high-side device) below the local ground potential. |
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