VERTICAL BIPOLAR TRANSISTOR WITH A MONOCRYSTALLINE EXTRINSIC BASE AND METHOD THEREFOR

A bipolar junction transistor (200) is formed, including a semiconductor substrate (210), a collector region (226, 220) formed within the semiconductor substrate (210) in a first semiconductor region having an upper surface and a collector sidewall (225), an intrinsic base region (230, 232, 234) dis...

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Bibliographische Detailangaben

Hauptverfasser:	Radic, Ljubo, John, Jay Paul, Donkers, Johannes Josephus Theodorus Marinus, Kirchgessner, James Albert
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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