VERTICAL BIPOLAR TRANSISTOR WITH A MONOCRYSTALLINE EXTRINSIC BASE AND METHOD THEREFOR

A bipolar junction transistor (200) is formed, including a semiconductor substrate (210), a collector region (226, 220) formed within the semiconductor substrate (210) in a first semiconductor region having an upper surface and a collector sidewall (225), an intrinsic base region (230, 232, 234) dis...

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Bibliographische Detailangaben
Hauptverfasser:	Radic, Ljubo, John, Jay Paul, Donkers, Johannes Josephus Theodorus Marinus, Kirchgessner, James Albert
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A bipolar junction transistor (200) is formed, including a semiconductor substrate (210), a collector region (226, 220) formed within the semiconductor substrate (210) in a first semiconductor region having an upper surface and a collector sidewall (225), an intrinsic base region (230, 232, 234) disposed over the collector region, a seed region (240, 244, 246) formed at an upper surface of the collector (230) outside the intrinsic base region, an extrinsic base region (250) having an upper surface and formed over the seed region (244) and electrically coupled to the intrinsic base region (230, 232, 234), and an emitter region (262) formed over the base region, wherein the seed region (240) is made of a monocrystalline semiconductor material and has a lower portion (244) coupled to the collector (220) and an upper portion (246) coupled to the extrinsic base (250).