SILICON CARBIDE INTEGRATED DEVICE AND METHOD FOR MANUFACTURING AN INTEGRATED DEVICE

An integrated device (11) includes: a semiconductor structural layer (5), including silicon carbide and having a first conductivity type; a power device (2) integrated in the structural layer (5); and an edge termination structure (3), extending in a ring around the power device (2) and having a sec...

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Bibliographische Detailangaben
1. Verfasser:	FRAGAPANE, Leonardo
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An integrated device (11) includes: a semiconductor structural layer (5), including silicon carbide and having a first conductivity type; a power device (2) integrated in the structural layer (5); and an edge termination structure (3), extending in a ring around the power device (2) and having a second conductivity type. The edge termination structure (3) includes a plurality of ring structures (10, 11, 12) each arranged around the power device (2) and in contiguous pairs. At least a first one (10, 11) of the ring structures (10, 11, 12) comprises a transition region (10b, 11b) contiguous to a second one (11, 12) of the ring structures (10, 11, 12). The transition region (10b, 11b) includes connection regions (10c, 11c), having the second conductivity type, connected to the second one (11, 12) of the ring structures (10, 11, 12) and alternating with charge control regions (10d, 11d) having the first conductivity type.