POWER SEMICONDUCTOR MODULE AND ELECTRIC POWER CONVERTER USING SAME

Provided is a power semiconductor module in which a gate terminal and an emittance terminal are disposed adjacent to each other and a main circuit wiring is disposed in the vicinity thereof. The power semiconductor module is capable of efficiently suppressing the impact of induction field, generated by current flowing through the main circuit wiring, on the gate terminal and the emittance terminal, thereby exhibiting reliability. The present invention is characterized by comprising: a gate terminal to which a control signal is inputted; a reference potential terminal disposed adjacent to the gate terminal with a predetermined interval from the gate terminal; a main circuit wiring disposed in the vicinity of the reference potential terminal and the gate terminal; and an electromagnetic shield disposed between the gate terminal and the reference potential terminal to shield induction field generated by current flowing through the main circuit wiring. The present invention is also characterized in that: the electromagnetic shield is integrally formed with the gate terminal and/or the reference potential terminal; and, in a portion between the gate terminal and the reference potential terminal, a gap that is not shielded by the electromagnetic shield as seen from a direction in which a magnetic flux of the induction field intersects with the electromagnetic shield, is 1 mm or less.