TRANSISTOR WITH INTEGRATED SHORT CIRCUIT PROTECTION

A semiconductor device has first and second current terminals and a control terminal that can be biased to form an electrically conductive path from the first current terminal to the second current terminal through a channel region and that is provided with a temperature sensitive current limiting d...

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Bibliographische Detailangaben
Hauptverfasser:	Saxena, Tanuj, Radic, Ljubo, Pigott, John, Khemka, Vishnu, Qin, Ganming
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor device has first and second current terminals and a control terminal that can be biased to form an electrically conductive path from the first current terminal to the second current terminal through a channel region and that is provided with a temperature sensitive current limiting device. The current-limiting device is integrally formed from semiconductor material of the control terminal and is configured to cause a reduction in electrical current flowing through the channel region when the temperature of the device in the channel region exceeds a predetermined threshold temperature.