SILICON CONTROLLED RECTIFIER SOAKING CONTROL METHOD AND APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM

A silicon controlled rectifier soaking control method and apparatus, and a computer-readable storage medium. The method comprises: acquiring heating parameters of at least two silicon controlled rectifiers connected in parallel (ST1), wherein the at least two silicon controlled rectifiers comprise a first silicon controlled rectifier and a second silicon controlled rectifier, and the heating parameters comprise a first heating parameter of the first silicon controlled rectifier and a second heating parameter of the second silicon controlled rectifier; comparing the first heating parameter and the second heating parameter with a set threshold value, and adjusting trigger angles of the first silicon controlled rectifier and/or the second silicon controlled rectifier on the basis of the comparison results (ST2); and repeatedly executing step ST1 and step ST2 until a difference value between the first heating parameter and the second heating parameter is within a set difference value range (ST3). By means of the method, there is no need to perform current equalization on silicon controlled rectifiers connected in parallel, and trigger angles of the silicon controlled rectifiers are directly adjusted by means of comparing heating parameters, thereby directly solving, from the source, the problem of soaking the silicon controlled rectifiers connected in parallel.