SYNTHETIC SINGLE-CRYSTAL DIAMOND AND MANUFACTURING METHOD THEREFOR

SYNTHETIC SINGLE-CRYSTAL DIAMOND AND MANUFACTURING METHOD THEREFOR

A synthetic single crystal diamond that includes nitrogen atoms at a concentration of 50 ppm or more and 1200 ppm or less in terms of number of atoms, wherein an infrared absorption spectrum of the synthetic single crystal diamond has an absorption signal within a wavenumber range of 1460 cm-1 or mo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE, Jin Hwa, SUMIYA, Hitoshi, TERAMOTO, Minori
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BORING
CHEMISTRY
CRYSTAL GROWTH
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
METALLURGY
PERFORMING OPERATIONS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
TURNING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A synthetic single crystal diamond that includes nitrogen atoms at a concentration of 50 ppm or more and 1200 ppm or less in terms of number of atoms, wherein an infrared absorption spectrum of the synthetic single crystal diamond has an absorption signal within a wavenumber range of 1460 cm-1 or more and 1470 cm-1 or less.