REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

REDUCED OPTICAL ABSORPTION FOR SILICON CARBIDE CRYSTALLINE MATERIALS

Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BALKAS, Elif, LEONARD, Robert Tyler, O'HARA, Kathryn A, KHLEBNIKOV, Yuri, MALTA, David P, TSVETKOV, Valeri F, BUBEL, Simon
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.