METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE

A method for fabricating semiconductor device includes the steps of: providing a substrate (12) having a logic region (16) and a magnetoresistive random access memory (MRAM) region, forming a magnetic tunneling junction, MTJ (34), on the MRAM region (14), forming a metal interconnection (26, 32, 48,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WU, Jia-Rong, TSAI, Ya-Huei, HUANG, Rai-Min, WANG, Yu-Ping, CHANG, I-Fan
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A method for fabricating semiconductor device includes the steps of: providing a substrate (12) having a logic region (16) and a magnetoresistive random access memory (MRAM) region, forming a magnetic tunneling junction, MTJ (34), on the MRAM region (14), forming a metal interconnection (26, 32, 48, 54) on the MTJ (34), forming a dielectric layer (64, 66, 68) on the metal interconnection (26, 32, 48, 54), patterning the dielectric layer (64, 66, 68) to form openings (70), and forming the blocking layer (60) on the patterned dielectric layer and the metal interconnection (26, 32, 48, 54) and into the openings (70); wherein the blocking layer (60) comprises a second dielectric layer, particularly silicon carbide, silicon carbon nitride, SiCN, or silicon carbo-oxynitride, SiCON.