DEVICE WITH FIELD PLATES

A structure includes at least one gate structure (20, 22, 38) over semiconductor material (16), the at least one gate structure comprising an active layer (20), a gate metal (38) extending from the active layer and a sidewall spacer (34) on sidewalls of the gate metal; and a field plate (26) aligned...

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Bibliographische Detailangaben
Hauptverfasser: ZIERAK, Michael J, LEVY, Mark D, KANTAROVSKY, Johnatan A, SHARMA, Santosh, BENTLEY, Steven J
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
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Beschreibung
Zusammenfassung:A structure includes at least one gate structure (20, 22, 38) over semiconductor material (16), the at least one gate structure comprising an active layer (20), a gate metal (38) extending from the active layer and a sidewall spacer (34) on sidewalls of the gate metal; and a field plate (26) aligned with the at least one gate structure and isolated from the gate metal by the sidewall spacer.