SEMICONDUCTOR DEVICE

Provided is a semiconductor device comprising: a plurality of trench portions that are provided from an upper surface of the semiconductor substrate to below a base region, and include a gate trench portion and a dummy trench portion; a second conductivity type first lower end region that is provided to be in contact with lower ends of two or more trench portions which include the gate trench portion; a second conductivity type well region that is arranged in a different location from the first lower end region in a top view, provided from the upper surface of the semiconductor substrate to below the base region, and has a doping concentration higher than that of the base region; and a second conductivity type second lower end region that is provided between the first lower end region and the well region in a top view being separated from the first lower end region and the well region, and provided to be in contact with lower ends of one or more trench portions including the gate trench portion.