SEMICONDUCTOR DEVICE

Provided is a semiconductor device comprising a semiconductor substrate provided with a drift region of a first conductivity type, wherein the semiconductor substrate includes: an active portion; and a trench portion provided in the active portion at an upper surface of the semiconductor substrate, the active portion includes: a first region in which trench portions including the trench portion are arrayed at a first trench interval in an array direction; and a second region in which trench portions including the trench portion are arrayed at a second trench interval greater than the first trench interval in the array direction, the first region includes a first bottom region of a second conductivity type provided over bottoms of at least two trench portions of the trench portions, and the second region includes a second bottom region of the second conductivity type provided at a bottom of one trench portion of the trench portions.