SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device includes a barrier layer (160) on a channel layer (140), a gate electrode (GA) on the barrier layer, a gate semiconductor layer (170) between the barrier layer and the gate electrode, and a source (SR) and a drain (DR) spaced apart from each other on the channel layer. The bar...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hwang, Sunkyu, Kim, Boram, Kim, Jongseob, Park, Junhyuk, Hwang, Injun, Oh, Jaejoon, Kim, Joonyong
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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