SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device includes a barrier layer (160) on a channel layer (140), a gate electrode (GA) on the barrier layer, a gate semiconductor layer (170) between the barrier layer and the gate electrode, and a source (SR) and a drain (DR) spaced apart from each other on the channel layer. The bar...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hwang, Sunkyu, Kim, Boram, Kim, Jongseob, Park, Junhyuk, Hwang, Injun, Oh, Jaejoon, Kim, Joonyong
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor device includes a barrier layer (160) on a channel layer (140), a gate electrode (GA) on the barrier layer, a gate semiconductor layer (170) between the barrier layer and the gate electrode, and a source (SR) and a drain (DR) spaced apart from each other on the channel layer. The barrier layer has a greater energy band gap than the channel layer. The gate semiconductor layer includes a first surface (AR1) contacting the barrier layer and a second surface (AR2) contacting the gate electrode, and a sidewall (SW) connecting the first surface with the second surface. An area of the second surface of the gate semiconductor layer is narrower than an area of the first surface. The sidewall of the gate semiconductor layer may include a plurality of surfaces having different slopes.