METHOD FOR OBTAINING PURIFIED SILICON METAL

The present invention refers to a method for obtaining purified silicon metal, the method comprising the steps of providing liquid silicon in a crystallisation mould wherein the crystallisation mould comprises crucible-lined walls; solidifying the liquid silicon by unidirectional solidification from...

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Bibliographische Detailangaben
Hauptverfasser:	FAY, Aurélie, ORDÁS, Ramón, DIEGUEZ, Joaquín, BERTHOLLET, Damien, RIVAT, Pascal, COCCO, François, MIGUEZ, José Manuel, VARELA, Gonzalo
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMISTRY COMPOUNDS THEREOF INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The present invention refers to a method for obtaining purified silicon metal, the method comprising the steps of providing liquid silicon in a crystallisation mould wherein the crystallisation mould comprises crucible-lined walls; solidifying the liquid silicon by unidirectional solidification from the crucible-lined walls of the mould while stirring the liquid silicon by means of electromagnetic stirring (EMS); stopping the unidirectional solidification when a percentage of the liquid silicon has solidified; decanting the excess liquid silicon; and removing the solid silicon metal ingot from the crystallisation mould. The invention further refers to a device comprising a crystallisation mould; an electromagnetic stirrer; and a decanting mechanism. Finally, the invention recites the use of the device in a method for obtaining purified silicon metal.