WAFER COMPOSITE, SEMICONDUCTOR DEVICE AND METHODS OF MANUFACTURING A SEMICONDUCTOR CIRCUIT

A layer stack (130) is formed that includes a device layer (110) and an insulator layer (120). The device layer (110) includes electronic elements (315). The insulator layer (120) is adjacent to a back surface (112) of the device layer (110). A spacer disk (190) is adhesive bonded on the layer stack...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	DEBIE, Derek, BUSCH, Joerg, FISCHER, Thomas, SCHMIDT, Matthias, PORWOL, Daniel, GRUBER, Hermann
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A layer stack (130) is formed that includes a device layer (110) and an insulator layer (120). The device layer (110) includes electronic elements (315). The insulator layer (120) is adjacent to a back surface (112) of the device layer (110). A spacer disk (190) is adhesive bonded on the layer stack (130) on a side opposite the device layer (110). The spacer disk (190) and the layer stack (130) form a wafer composite (100). The wafer composite (100) is divided into a plurality of individual semiconductor chips (900), wherein each semiconductor chip (900) includes a portion of the layer stack (130) and a portion of the spacer disk (190).