A METHOD OF SINGULATION OF DIES FROM A WAFER

The present disclosure relates to a method of singulation of dies from a wafer, the wafer comprising a semiconductor layer and a coating applied to the backside of the wafer after backgrinding, and wherein the coating comprises at least one metallization layer, the dies being separated along saw streets running in multiple directions, the method comprising the steps of: dicing the wafer along the saw streets from a topside of the wafer; wherein the dicing is performed through plasma dicing for a dicing depth corresponding to the interface between the semiconductor layer and the coating, and the method further comprising the step of: etching the wafer in accordance with an etch mask corresponding to the saw streets, for each of the remaining metallization layers in the coating, for singulating the dies from the wafer.