A METHOD AND A SYSTEM FOR MANUFACTURING AN ASSEMBLY OF A POWER SEMICONDUCTOR
The present invention concerns a method for manufacturing a package of a power semiconductor and a package comprising a power semiconductor (200). The package comprises:- conducting layers (240a,240b, 240c) over each electrode (250a,250b,250c) of the power semiconductor,- nanowires (500a, 500b, 500c...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | The present invention concerns a method for manufacturing a package of a power semiconductor and a package comprising a power semiconductor (200). The package comprises:- conducting layers (240a,240b, 240c) over each electrode (250a,250b,250c) of the power semiconductor,- nanowires (500a, 500b, 500c) over the part of the conducting layer that are over the electrodes,- cured prepeg (700a, 700b) on each side of the power semiconductor and over (910b) a part of a masking film that separate two electrodes,- conducting layers (110a, 110b)) over nanowires, the conducting layers over each electrode of the power semiconductor, the nanowires and the conducting layers over the nanowires forming a single conductor unit. |
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