MEMORY DEVICE

According to one embodiment, memory device includes a first (10), second (20), and third (30) conductive layers in this order, a resistance change layer (40) between the first and the second conductive layers, and a switching layer (50) between the second and the third conductive layers. The switching layer contains: at least one first substance (51) from a group consisting of oxide of at least one element from a group consisting of Cr, La, Ce, Y, Sc, Zr, and Hf, nitride of the at least one element, and oxynitride of the at least one element; a second substance (52) being at least one metal from a group consisting of Te, Se, Sb, Bi, Ge, and Sn; and at least one third substance (53) from a group consisting of oxide of the second substance, nitride of the second substance, and oxynitride of the second substance.