HIGH PRESSURE PROCESSING APPARATUS FOR THE MANUFACTURING OF SEMICONDUCTORS WAFERS

Provided is a high pressure processing apparatus including: a first chamber accommodating an object to be processed; a second chamber surrounding the first chamber and heating the first chamber; a third chamber including a 3-1-th chamber surrounding a portion of the second chamber and a 3-2-th chamb...

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Bibliographische Detailangaben
Hauptverfasser:	LIM, Kun Young, Min, Bin hong
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a high pressure processing apparatus including: a first chamber accommodating an object to be processed; a second chamber surrounding the first chamber and heating the first chamber; a third chamber including a 3-1-th chamber surrounding a portion of the second chamber and a 3-2-th chamber surrounding another portion of the second chamber; and a supply module supplying a process gas for processing the object in the first chamber at a first pressure, supplying a protection gas to a space between the second chamber and the first chamber at a second pressure set in relation to the first pressure, and supplying a defense gas to a space between each of the 3-1-th chamber and the 3-2-th chamber and the second chamber at a third pressure lower than the first pressure and the second pressure and higher than an external pressure of the third chamber to block external air from being introduced into the third chamber.