PLANAR INP-BASED SPAD AND APPLICATION THEREOF

Provided in the present invention are a planar InP-based SPAD and an application thereof. The design of an isolation ring in the planar InP-based SPAD can effectively prevent a tunneling effect and reduce a dark count rate, thereby improving the device performance of the InP-based SPAD, achieving a shorter avalanche time and a lower dark current, and also effectively improving the quantum efficiency, and acquiring a higher response frequency. Compared with a conventional Si-based CMOS device, an InP material system has the feature of radiation resistance, thereby being more suitable for fields of aerospace communication, nuclear power, etc. In addition, a planar electrode structure better facilitates the formation and subsequent encapsulation of a contact layer, and the integration with other devices or microcircuits. The present invention effectively overcomes various disadvantages in the prior art, and thus has a high industrial application value.