INTER-PIXEL SUBSTRATE ISOLATION

Aspects of the technology described herein relate to improved semiconductor-based image sensor designs. In some embodiments, an integrated circuit may comprise a plurality of photodetection regions and one or more intermediate regions between the photodetection regions. In some embodiments, the intermediate regions may comprise bulk semiconductor material that facilitates a transfer of noise charge carriers from the intermediate regions to drain regions associated with each photodetection region. In some embodiments, a drain device may be configured with a gate controlling the flow of charge carriers from the intermediate regions and photodetection regions to drain regions. In some embodiments, an integrated circuit may comprise an array of pixels and a control circuit configured to control a transfer of charge carriers in the array of pixels.