SOLID-STATE IMAGING DEVICE, ELECTRONIC EQUIPMENT, AND MOVING BODY

A solid-state imaging device according to an embodiment of the present disclosure includes a semiconductor layer, a first capacitor section, and a second capacitor section. The semiconductor layer is stacked on a first Si substrate, and includes a photoelectric conversion region and a floating diffu...

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Bibliographische Detailangaben
Hauptverfasser:	KOGA, Fumihiko, WATANABE, Taiichiro
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A solid-state imaging device according to an embodiment of the present disclosure includes a semiconductor layer, a first capacitor section, and a second capacitor section. The semiconductor layer is stacked on a first Si substrate, and includes a photoelectric conversion region and a floating diffusion region. The photoelectric conversion region has a predetermined wavelength selectivity. The floating diffusion region converts electric charge transferred from the photoelectric conversion region into an electric signal and outputs the electric signal. The first capacitor section is formed in the first Si substrate, and holds a reset voltage of the floating diffusion region at the time when a voltage of the floating diffusion region is reset. The second capacitor section is formed in the first Si substrate, and holds a signal voltage generated by the electric signal.