INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME

INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME

An integrated circuit device comprises an upper transistor that is on a substrate. The upper transistor comprises an upper channel region (108). The integrated circuit device further comprises a lower transistor that is between the substrate and the upper transistor. The lower transistor comprises a...

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Bibliographische Detailangaben
Hauptverfasser: SEO, Kang-ill, YUN, Seungchan, SONG, Seungmin, JUNG, Myunghoon, PARK, Keumseok
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An integrated circuit device comprises an upper transistor that is on a substrate. The upper transistor comprises an upper channel region (108). The integrated circuit device further comprises a lower transistor that is between the substrate and the upper transistor. The lower transistor comprises a lower channel region (106). The integrated circuit device further includes an integrated insulator (126) that is between the lower channel region and the upper channel region. The integrated insulator comprises an outer layer (129) and an inner layer (127) in the outer layer, wherein the inner layer and the outer layer comprise different materials.