BUILT-IN TEMPERATURE SENSORS

The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture and operation. The structure includes: a semiconductor on insulator substrate; an insulator layer under the semiconductor on insulator substrate; a handle sub...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN, Yiching, ZHAO, Zhixing
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING QUANTITY OF HEAT MEASURING TEMPERATURE PHYSICS SEMICONDUCTOR DEVICES TESTING THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	The present disclosure relates to semiconductor structures and, more particularly, to built-in temperature sensors and methods of manufacture and operation. The structure includes: a semiconductor on insulator substrate; an insulator layer under the semiconductor on insulator substrate; a handle substrate under insulator layer; a first well of a first dopant type in the handle substrate; a second well of a second dopant type in the handle substrate, adjacent to the first well; and a back-gate diode at a juncture of the first well and the second well.