VOLTAGE GENERATION CIRCUIT FOR SRAM

VOLTAGE GENERATION CIRCUIT FOR SRAM

A memory includes a supply voltage generation circuit for providing a supply voltage to a plurality of SRAM cells of the memory during at least one mode of memory operation. The supply voltage generation circuit includes a first reference generation circuit that includes at least one SRAM cell with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Bode, Hubert Martin, Abeln, Glenn Charles, Hoefler, Alexander
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A memory includes a supply voltage generation circuit for providing a supply voltage to a plurality of SRAM cells of the memory during at least one mode of memory operation. The supply voltage generation circuit includes a first reference generation circuit that includes at least one SRAM cell with a replica SRAM latch. The first reference generation circuit provides a first voltage during an at least one mode of memory operation. The supply voltage generation circuit includes a second reference generation circuit that includes at least one SRAM cell with a replica SRAM latch. The second reference generation circuit provides a second voltage during the at least one mode of memory operation. The voltage generation circuit includes an output for providing a supply voltage to the plurality of cells during the at least one mode of memory operation.