SEMICONDUCTOR DEVICE

In an aspect, a semiconductor device includes a gate. The gate includes a first portion that is located on one end of the gate, a second portion that is located on an opposite end of the gate from the first portion, and a third portion that is located in-between the first portion and the second port...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	YANG, Haining, BAO, Junjing
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In an aspect, a semiconductor device includes a gate. The gate includes a first portion that is located on one end of the gate, a second portion that is located on an opposite end of the gate from the first portion, and a third portion that is located in-between the first portion and the second portion. A first cap located on top of the first portion. A second cap located on top of the second portion. The third portion is capless. A gate contact is located on top of the third portion.