GA2O3-BASED SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING GA2O3-BASED SINGLE CRYSTAL SUBSTRATE

Problem: To realize a Ga2O3-based single crystal substrate in which, even if an AlxGa(1-x)N (0≤x≤1)-based semiconductor is laminated on a Ga2O3-based single crystal substrate, no cracks or delamination occurs in a semiconductor layer and/or the Ga2O3-based single crystal substrate, and a high-quality and homogeneous semiconductor film is obtained, and to provide a method of manufacturing the Ga2O3-based single crystal substrate, an AlxGa(1-x)N-based optical semiconductor device using the Ga2O3-based single crystal substrate and an AlxGa(1-x)N-based power semiconductor device.Solution: A Ga2O3-based single crystal substrate having an amount of warpage of -50 µm or more and 50 µm or less (including 0 µm) on a main surface. A method of manufacturing a Ga2O3-based single crystal substrate, including processing a substrate from a Ga2O3-based single crystal grown according to an induction heating type single crystal growth method to have an amount of warpage of -50 µm or more and 50 µm or less (including 0 µm) on a main surface.