LAMINATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Provided is a laminate that can be implemented with a wide processing margin and without adhesive residue or damage to a semiconductor element in the transfer of the semiconductor element using laser light of various wavelengths. The laminate is obtained by laminating a substrate 1 having laser perm...

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Bibliographische Detailangaben
Hauptverfasser:	TOMIKAWA, Masao, ARIMOTO, Yukari, FUJIWARA, Takenori, NAKAJIMA, Risano, KOSHINO, Mika, ARAKI, Hitoshi, AOSHIMA, Kenta
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMISTRY COMPOSITIONS BASED THEREON LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING
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Beschreibung
Zusammenfassung:	Provided is a laminate that can be implemented with a wide processing margin and without adhesive residue or damage to a semiconductor element in the transfer of the semiconductor element using laser light of various wavelengths. The laminate is obtained by laminating a substrate 1 having laser permeability, a resin film 1 and a resin film 2 in this order, wherein the light absorbance of the resin film 1 calculated for a film thickness of 1.0 µm at any wavelength of 200 nm to 1100 nm is 0.4-5.0, and the adhesive strength of the surface of the resin film 2 on the side opposite that of the resin film 1 side is 0.02-0.3 N/cm.