REVERSIBLE RESISTIVE MEMORY LOGIC GATE DEVICE

REVERSIBLE RESISTIVE MEMORY LOGIC GATE DEVICE

A memory device includes two phase change memory (PCM) cells and a bridge. The first PCM cell includes an electrical input and a phase change material. The second PCM cell includes an electrical input that is independent from the electrical input of the first PCM cell and another phase change materi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: FAN, Su Chen, WANG, Junli, CHEN, Hsueh-Chung
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A memory device includes two phase change memory (PCM) cells and a bridge. The first PCM cell includes an electrical input and a phase change material. The second PCM cell includes an electrical input that is independent from the electrical input of the first PCM cell and another phase change material. The bridge is electrically connected to the two PCM cells.