FIELD-PROGRAMMABLE FERRO-DIODES FOR RECONFIGURABLE IN-MEMORY-COMPUTING

Ferroelectric diodes comprising materials such as aluminum scandium nitride (AlScN) or hafnium zirconium oxide (HfZrO2) may be formed atop semiconductor structures such as CMOS wafers to create storage memory cells. search Ternary Content Addressable Memory (TCAM) cells, and/neural circuitry. The di...

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Bibliographische Detailangaben

Hauptverfasser:	JARIWALA, Deep, OLSSON III, Roy H, LIU, Xiwen, FIAGBENU, Merrilyn Mercy Adzo, WANG, Dixiong, STACH, Eric Andrew, ZHENG, Jeffrey
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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