FIELD-PROGRAMMABLE FERRO-DIODES FOR RECONFIGURABLE IN-MEMORY-COMPUTING

FIELD-PROGRAMMABLE FERRO-DIODES FOR RECONFIGURABLE IN-MEMORY-COMPUTING

Ferroelectric diodes comprising materials such as aluminum scandium nitride (AlScN) or hafnium zirconium oxide (HfZrO2) may be formed atop semiconductor structures such as CMOS wafers to create storage memory cells. search Ternary Content Addressable Memory (TCAM) cells, and/neural circuitry. The di...

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Hauptverfasser: JARIWALA, Deep, OLSSON III, Roy H, LIU, Xiwen, FIAGBENU, Merrilyn Mercy Adzo, WANG, Dixiong, STACH, Eric Andrew, ZHENG, Jeffrey
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Ferroelectric diodes comprising materials such as aluminum scandium nitride (AlScN) or hafnium zirconium oxide (HfZrO2) may be formed atop semiconductor structures such as CMOS wafers to create storage memory cells. search Ternary Content Addressable Memory (TCAM) cells, and/neural circuitry. The diodes are non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, with high on/off and self-rectifying ratios. Cells may be formed, for example, with two diodes that are oppositely polarized, and may be achieved without transistors to form, for example, 0T-2R structures.