A HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE

A HETEROEPITAXIAL WAFER FOR THE DEPOSITION OF GALLIUM NITRIDE

A heteroepitaxial wafer comprising in the following order (1) a substrate made of Silicon having a thickness, a diameter, a crystal orientation, a resistivity, a frontside and a backside, (2) a nucleation layer comprising AIN and 3C-SiC, (3) a first boron nitride layer having a first boron nitride l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Thapa, Sarad Bahadur, Murphy, Brian
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A heteroepitaxial wafer comprising in the following order (1) a substrate made of Silicon having a thickness, a diameter, a crystal orientation, a resistivity, a frontside and a backside, (2) a nucleation layer comprising AIN and 3C-SiC, (3) a first boron nitride layer having a first boron nitride layer thickness and (4) a layer of nitride having a nitride layer thickness comprising an element out of the list of elements of Aluminum, Gallium, Indium and Thallium.