SAME LEVEL MRAM STACKS HAVING DIFFERENT CONFIGURATIONS

SAME LEVEL MRAM STACKS HAVING DIFFERENT CONFIGURATIONS

A semiconductor device is provided. The semiconductor device includes a base layer, a first MRAM device formed on the base layer, and a second MRAM device formed on the base layer. The first MRAM device has a different performance characteristic than the second MRAM device.

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Bibliographische Detailangaben
Hauptverfasser: VAN DER STRATEN, Oscar, MIGNOT, Yann, HOUSSAMEDDINE, Dimitri
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A semiconductor device is provided. The semiconductor device includes a base layer, a first MRAM device formed on the base layer, and a second MRAM device formed on the base layer. The first MRAM device has a different performance characteristic than the second MRAM device.