COMPOUND SEMICONDUCTOR-BASED DEVICES WITH STRESS-REDUCTION FEATURES

Structures including compound semiconductor-based devices and silicon-based devices integrated on a semiconductor substrate and methods of forming such structures. The structure comprises a layer stack on a substrate, a conductive contact extending in a vertical direction fully through the layer stack to the substrate, and a device structure including a source ohmic contact and a drain ohmic contact. The layer stack including a plurality of semiconductor layers each comprising a compound semiconductor material, the conductive contact is arranged in the layer stack to separate a first portion of the layer stack from a second portion of the layer stack, and the source ohmic contact and the drain ohmic contact have a contacting relationship with at least one of the plurality of semiconductor layers of the first portion of the layer stack.