SURFACE TREATMENT METHOD, DRY ETCHING METHOD, CLEANING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ETCHING DEVICE

SURFACE TREATMENT METHOD, DRY ETCHING METHOD, CLEANING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ETCHING DEVICE

The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal nitride at low temperatures without using plasma. The present disclosure relates to a surface treatment method including bringing a β-diketone and NO2 into contact with a surface of...

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Bibliographische Detailangaben
Hauptverfasser: YAMAUCHI, Kunihiro, KITAYAMA, Hikaru, KIKUCHI, Akiou
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal nitride at low temperatures without using plasma. The present disclosure relates to a surface treatment method including bringing a β-diketone and NO2 into contact with a surface of a workpiece.