SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, AND EXHAUST SYSTEM

There is provided a technique that includes: a first gas supply line configured to supply a first gas to a substrate in a process chamber; a first exhaust line connected to a first pump and exhausting the first gas supplied to the substrate; a first valve installed at the first exhaust line; a secon...

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Bibliographische Detailangaben
Hauptverfasser:	KADOSAKI Tomohiko, TAKEUCHI Fumikazu, NISHIDA Masaya, ANDO Fumie, MAEDA Kenichi, KUWATA Yosuke
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	There is provided a technique that includes: a first gas supply line configured to supply a first gas to a substrate in a process chamber; a first exhaust line connected to a first pump and exhausting the first gas supplied to the substrate; a first valve installed at the first exhaust line; a second gas supply line configured to supply a second gas to the substrate in the process chamber; a second exhaust line connected to a second pump and exhausting the second gas supplied to the substrate; a second valve installed at the second exhaust line; and a controller capable of controlling the first valve and the second valve, so as to perform a first line change processing of exhausting the first gas supplied to the substrate toward the second pump via the second exhaust line, when determining that the first exhaust line transitioned into a predetermined state.