POLYCRYSTALLINE SIC MOLDED ARTICLE AND METHOD FOR PRODUCING SAME

The present invention addresses the problem of providing: a polycrystalline SiC molded article that has a small volume resistivity despite having a small crystal grain size; and a method for producing the same. The present invention provides a polycrystalline SiC molded body in which the average cry...

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Bibliographische Detailangaben
Hauptverfasser:	IIDA, Takuji, TAKAHASHI, Ikuya, JINDO, Hiroyuki, OISHI, Shohei, YASHIKIDA, Reiko, USHIJIMA, Yuji
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention addresses the problem of providing: a polycrystalline SiC molded article that has a small volume resistivity despite having a small crystal grain size; and a method for producing the same. The present invention provides a polycrystalline SiC molded body in which the average crystal grain size of 5 μm or less, a nitrogen concentration of 2.7×1019 to 5.4×1020 (pcs./cm3), and the product of the carrier density×Hall mobility of 4.0×1020 to 6.0×1021 (pcs./cmVsec).