METHOD OF MAKING A SEMICONDUCTOR DEVICE

METHOD OF MAKING A SEMICONDUCTOR DEVICE

Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device (200) may include a first layer (234) having a first conductivity type; a second layer (222) disposed atop the first layer, the second layer having the first co...

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Hauptverfasser: SUI, Yang, BOLOTNIKOV, Alexander Viktorovich, LOSEE, Peter Almem
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator SUI, Yang
BOLOTNIKOV, Alexander Viktorovich
LOSEE, Peter Almem
description Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device (200) may include a first layer (234) having a first conductivity type; a second layer (222) disposed atop the first layer, the second layer having the first conductivity type; a termination region (233) formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region (232) at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP4290583A3</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP4290583A3</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP4290583A33</originalsourceid><addsrcrecordid>eNrjZFD3dQ3x8HdR8HdT8HX09vRzV3BUCHb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgEmRpYGphbGjsbGRCgBAIRvIzU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MAKING A SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>SUI, Yang ; BOLOTNIKOV, Alexander Viktorovich ; LOSEE, Peter Almem</creator><creatorcontrib>SUI, Yang ; BOLOTNIKOV, Alexander Viktorovich ; LOSEE, Peter Almem</creatorcontrib><description>Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device (200) may include a first layer (234) having a first conductivity type; a second layer (222) disposed atop the first layer, the second layer having the first conductivity type; a termination region (233) formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region (232) at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.</description><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231227&amp;DB=EPODOC&amp;CC=EP&amp;NR=4290583A3$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25568,76551</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20231227&amp;DB=EPODOC&amp;CC=EP&amp;NR=4290583A3$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUI, Yang</creatorcontrib><creatorcontrib>BOLOTNIKOV, Alexander Viktorovich</creatorcontrib><creatorcontrib>LOSEE, Peter Almem</creatorcontrib><title>METHOD OF MAKING A SEMICONDUCTOR DEVICE</title><description>Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device (200) may include a first layer (234) having a first conductivity type; a second layer (222) disposed atop the first layer, the second layer having the first conductivity type; a termination region (233) formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region (232) at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD3dQ3x8HdR8HdT8HX09vRzV3BUCHb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxrgEmRpYGphbGjsbGRCgBAIRvIzU</recordid><startdate>20231227</startdate><enddate>20231227</enddate><creator>SUI, Yang</creator><creator>BOLOTNIKOV, Alexander Viktorovich</creator><creator>LOSEE, Peter Almem</creator><scope>EVB</scope></search><sort><creationdate>20231227</creationdate><title>METHOD OF MAKING A SEMICONDUCTOR DEVICE</title><author>SUI, Yang ; BOLOTNIKOV, Alexander Viktorovich ; LOSEE, Peter Almem</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP4290583A33</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SUI, Yang</creatorcontrib><creatorcontrib>BOLOTNIKOV, Alexander Viktorovich</creatorcontrib><creatorcontrib>LOSEE, Peter Almem</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUI, Yang</au><au>BOLOTNIKOV, Alexander Viktorovich</au><au>LOSEE, Peter Almem</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MAKING A SEMICONDUCTOR DEVICE</title><date>2023-12-27</date><risdate>2023</risdate><abstract>Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device (200) may include a first layer (234) having a first conductivity type; a second layer (222) disposed atop the first layer, the second layer having the first conductivity type; a termination region (233) formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region (232) at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF MAKING A SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-17T13%3A24%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SUI,%20Yang&rft.date=2023-12-27&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP4290583A3%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true