METHOD OF MAKING A SEMICONDUCTOR DEVICE

Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device (200) may include a first layer (234) having a first conductivity type; a second layer (222) disposed atop the first layer, the second layer having the first co...

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Bibliographische Detailangaben
Hauptverfasser:	SUI, Yang, BOLOTNIKOV, Alexander Viktorovich, LOSEE, Peter Almem
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Embodiments of a semiconductor device and methods of forming thereof are provided herein. In some embodiments, a power semiconductor device (200) may include a first layer (234) having a first conductivity type; a second layer (222) disposed atop the first layer, the second layer having the first conductivity type; a termination region (233) formed in the second layer, the termination region having a second conductivity type opposite the first type; and an active region (232) at least partially formed in the second layer, wherein the active region is disposed adjacent to the termination region proximate a first side of the termination region and wherein the second layer is at least partially disposed adjacent to the termination region proximate a second side of the termination region opposite the first side.