METHOD FOR MANUFACTURING HIGH-ELECTRON-MOBILITY TRANSISTOR

METHOD FOR MANUFACTURING HIGH-ELECTRON-MOBILITY TRANSISTOR

A method for manufacturing a high-electron-mobility transistor includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate includes a channel layer and a barrier layer on the channel layer; forming a protective layer on the semiconductor substrate at a posi...

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1. Verfasser: WU, Chan-Shin
Format: Patent
Sprache:eng ; fre ; ger
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description A method for manufacturing a high-electron-mobility transistor includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate includes a channel layer and a barrier layer on the channel layer; forming a protective layer on the semiconductor substrate at a position corresponding to a gate opening; forming an overlay layer on the semiconductor substrate in an area around the protective layer, and removing the protective layer to form the gate opening; and forming a p-type layer in and at the gate opening and on the overlay layer. Compared with the prior art, the method for manufacturing a high-electron-mobility transistor lowers the technical threshold of manufacture, allows the threshold voltage (Vth) and ON-resistance (Rds(ON)) of each such transistor to be individually controlled at the desired levels, and can improve product yield effectively.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD FOR MANUFACTURING HIGH-ELECTRON-MOBILITY TRANSISTOR
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