METHOD FOR MANUFACTURING HIGH-ELECTRON-MOBILITY TRANSISTOR

A method for manufacturing a high-electron-mobility transistor includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate includes a channel layer and a barrier layer on the channel layer; forming a protective layer on the semiconductor substrate at a position corresponding to a gate opening; forming an overlay layer on the semiconductor substrate in an area around the protective layer, and removing the protective layer to form the gate opening; and forming a p-type layer in and at the gate opening and on the overlay layer. Compared with the prior art, the method for manufacturing a high-electron-mobility transistor lowers the technical threshold of manufacture, allows the threshold voltage (Vth) and ON-resistance (Rds(ON)) of each such transistor to be individually controlled at the desired levels, and can improve product yield effectively.