COLLOIDAL QUANTUM DOT PHOTODETECTORS

Colloidal quantum dot devices are provided including an integrated circuit; a colloidal quantum dot structure on the integrated circuit; and an encapsulation layer on the colloidal quantum dot structure, the encapsulation layer having a thickness from about 0.5 nm to about 500 nm.

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Bibliographische Detailangaben
Hauptverfasser:	HILTON, JR., Jeffery Allan, BOND, Michael Anthony, KLEM, Ethan J.D, GREGORY, Christopher, VIOLETTE, Katherine Elizabeth
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	Colloidal quantum dot devices are provided including an integrated circuit; a colloidal quantum dot structure on the integrated circuit; and an encapsulation layer on the colloidal quantum dot structure, the encapsulation layer having a thickness from about 0.5 nm to about 500 nm.